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| SK 60 GAL 128 Absolute Maximum Ratings Symbol Conditions IGBT Values Units Freewheeling CAL diode SEMITOP(R) 2 IGBT Module SK 60 GAR 128 SK 60 GAL 128 Target Data Characteristics Symbol Conditions IGBT min. typ. max. Units Features Freewheeling CAL diode Typical Applications Mechanical data GAL GAR 1 20-10-2005 RAM (c) by SEMIKRON SK 60 GAL 128 Fig.5 Typ. output characteristic, tp = 250 s, 25 C Fig.6 Typ. output characteristic, tp = 25 s, 125 C Fig.7 Turn-on / -off energy = f (IC) Fig.8 Turn-on / -off energy = f (RG) Fig.9 Typ. gate charge characteristic 2 20-10-2005 RAM (c) by SEMIKRON SK 60 GAL 128 Fig.11 Typ. switching times vs. IC Fig.12 Typ. switching times vs. gate resistor RG Fig.13 Typ. CAL Diode peak reverse recovery current Fig. 14 Typ. Cal Diode forward characteristic 3 20-10-2005 RAM (c) by SEMIKRON SK 60 GAL 128 UL Recognized File no. E 63532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 20-10-2005 RAM (c) by SEMIKRON |
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